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Altera Corp field programmable gate array fpga
Field Programmable Gate Array Fpga, supplied by Altera Corp, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/field-programmable+gate+array/array+field+gate+programmable/us12656390-133-48-55
Average 86 stars, based on 1 article reviews
field programmable gate array fpga - by Bioz Stars, 2026-11
86/100 stars

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Article Title: A novel Interleaved Bridgeless SEPIC Converter with Synchronous Rectifier for multiple applications
Article Snippet: An ALTERA field-programmable gate array is used to implement and control the entire system.

Article Title: Low-cost, high-speed back-end processing system for high-frequency ultrasound B-mode imaging
Article Snippet: However, the mean value of differences in accuracy between the new and conventional algorithms was 0.56%, which we considered to be acceptable and capable of providing similar image quality as the conventional counterparts. fig. 6 shows images of the wire phantom. the total scanlines were 108, the scanning angle was 12.8°, logarithmic compression with a 72 dB dynamic range was performed, and the pixel spacing was 7.725 μm. as a result, the −6dB axial and lateral resolutions of fig. 6(b) acquired by the system were 42.0 μm and 75.8 μm, respectively. this spatial resolution was comparable to that computed from rf data in fig. 6(a) of which the −6 dB axial and lateral resolutions were 42.5 μm and 71.7 μm, respectively. furthermore, the correlation coefficient of these images was taBle i. the usage of internal Memory of the field-programmable Gate array fPGa (stratix eP1s60f1020c6, altera corporation, san jose, ca) used for look-up tables (lut) in each function.1 functions dtGc qdM envelope detector dsc line buffers display memory lut size (bits) 30 720 65 536 102 400 1 646 834 98 304 1 048 576 usage rate 57.3% (2 990 370/5 215 104 bits)2 1dtGc = digital time gain compensation; qdM = quadrature demodulation; and dsc = digital scan conversion.

Article Title: A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM
Article Snippet: Novel cell structures based on one transistor and two uneven magnetic tunnel junction cell and pillar write word line architecture are proposed to shrink the bit size with a potential down to 6 F by a so-called extended via process, and to reduce the writing current by a factor of 2, combined with the nature of nonvolatility and high speed, making the magnetoresistive random access memory suitable for universal memory applications.



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